unisonic technologies co., ltd up2518 preliminary pnp transistor www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r206-083.bb low v ce(sat) pnp silicon power transistors ? features * extremely low collector-emitter saturation voltage v ce(sat) and corresponding extremely low equivalent on-resistance r ce(sat) (97m ? at 1.5a) * high collector current capability(1.5a) * high peak pulse current up to 6a * high collector current gain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UP2518L-AE3-R up2518g-ae3-r sot-23 e b c tape reel ? marking y18 l: lead free g: halogen free
up2518 preliminary pnp transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-083.bb absolute maximum rating ( t a = 25c, unless otherwise stated ) parameter symbol ratings unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v peak pulse current (note 2) i peak -6 a continuous collector current i c -1.5 a base current i b -500 ma power dissipation (note 3) t a =25c p d 625 mw junction temperature t j +150 storage temperature t stg -55~+150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width=300s. duty cycle 2% 3. assume the device is mounted and me asured on a ceramic substrate15x15x0.6mm ? electrical characteristics ( t a = 25c, unless otherwise stated ) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = -100a -20 -65 v collector-emitter breakdown voltage bv ceo i c = -10ma (note) -20 -55 v emitter-base breakdown voltage bv ebo i e = -100a -5 -8.8 v collector cut-off current i cbo v cb = -15v -100 na emitter cut-off current i ebo v eb = -4v -100 na collector emitter cut-off current i ces v ces = -15v -100 na i c = -100ma, i b = -10ma (note) -16 -40 mv i c = -1a, i b = -20ma (note) -130 -200 mv collector-emitter satu ration voltage v ce(sat) i c = -1.5a, i b = -50ma (note) -145 -220 mv base-emitter satura tion voltage v be(sat) i c = -1.5a, i b = -50ma (note) -0.87 -1.0 v base-emitter turn -on voltage v be(on) v ce = -2v, i c = -2a (note) -0.81 -1.0 v v ce = -2v, i c = -10ma (note) 300 475 v ce = -2v, i c = -100ma (note) 300 450 v ce = -2v, i c = -2a, (note) 150 230 v ce = -2v, i c = -4a, (note) 35 70 dc current gain h fe v ce = -2v, i c = -6a, (note) 15 30 transition frequency f t v ce =-10v , i c = -50ma, f=100mhz 150 180 mhz output capacitance c ob v cb = -10v, f=1mhz 21 30 pf turn-on time t (on) 40 ns turn-off time t (off) v cc = -10v, i c = -1a i b1 = i b2 = -20ma 670 ns note: measured under pulsed conditions. pulse width=300s. duty cycle 2%
up2518 preliminary pnp transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-083.bb utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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